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Journal Article

Kinetics of indirect electron-hole recombination in a wide single quantum well in a strong electric field

MPS-Authors
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Solov'ev,  V. V.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Kukushkin,  I. V.
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Smet,  J. H.
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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von Klitzing,  K.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Dietsche,  W.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Solov'ev, V. V., Kukushkin, I. V., Smet, J. H., von Klitzing, K., & Dietsche, W. (2006). Kinetics of indirect electron-hole recombination in a wide single quantum well in a strong electric field. JETP Letters, 84(4), 222-225.


Cite as: https://hdl.handle.net/21.11116/0000-000E-FB33-E
Abstract
The kinetics of the indirect recombination of electrons and holes in
wide single quantum wells in a strong electric field has been analyzed.
It has been shown that the recombination time increases exponentially
up to 20 mu s due to the spatial separation of oppositely charged
particles. The results of a theoretical model predicting the behavior
of the recombination time as a function of the applied field are in
good agreement with experimental data.