English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Local equilibrium and global relaxation of strained SiGe/Si(001) layers

MPS-Authors
/persons/resource/persons280560

Stoffel,  M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280417

Rastelli,  A.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280299

Merdzhanova,  T.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280485

Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Stoffel, M., Rastelli, A., Tersoff, J., Merdzhanova, T., & Schmidt, O. G. (2006). Local equilibrium and global relaxation of strained SiGe/Si(001) layers. Physical Review B, 74(15): 155326.


Cite as: https://hdl.handle.net/21.11116/0000-000E-FB59-4
Abstract
We investigate the morphological evolution of islands obtained by
epitaxial growth of Ge on Si(001) substrates. We are able to obtain
highly uniform distributions of SiGe islands, which exhibit a "barn"
shape. In addition to previously observed facets, we identify higher
index facets, which are not observed in dome-shaped islands. The
evolution of the island-related facet area provides evidence of a
transition from domes to steeper barns, which continues the sequence of
coherent island types before the onset of plastic relaxation. For
higher Ge coverages, when plastically relaxed islands (superdomes)
form, the island ensemble loses its homogeneity. This is essentially
the result of anomalous coarsening, with material being transferred
from coherent islands to larger superdomes.