Manganese as a fast charge carrier trapping center in InP

Korona, K. P.; Wysmołek, A.; Kamińska, M.; Twardowski, A.; Piersa, M.; Palczewska, M.; Strzelecka, G.; Hruban, A.; Kuhl, J.; Adomavicius, R.; Krotkus, A.

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Manganese as a fast charge carrier trapping center in InP

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Korona, K. P.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Wysmołek, A.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Kuhl, J.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Korona, K. P., Wysmołek, A., Kamińska, M., Twardowski, A., Piersa, M., Palczewska, M., et al. (2006). Manganese as a fast charge carrier trapping center in InP. Physica B, 382(1-2), 220-228.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FB0F-8

Abstract

Significant influence of Mn centers on the radiative and nonradiative
recombinations in Czochralski-grown InP:Mn crystals was observed.
Time-resolved measurements showed that manganese recombination centers
caused very fast, probably subpicosecond, decay of holes and excitons.
This recombination was explained by the capture of holes on an excited
state of the Mn acceptor. The holes trapping coefficient R-Mn
determined on the order of 10(-5) cm(3)/s provided an estimation of the
Mn cross-section for hole capture sigma(p) of the order of 10(-12)
cm(2). Electrical transport measurements showed that hopping
conductivity dominated at low temperatures. From analysis of the
hopping, the wavefunction radius of Mn-bound hole a(f) = 0.74 +/- 0.1
nm was calculated. A model explaining the values of af is presented.
(c) 2006 Elsevier B.V. All rights reserved.