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Strain distribution in a transistor using self-assembled SiGe islands in source and drain regions

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Kar,  G. S.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Kiravittaya,  S.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Denker,  U.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Kar, G. S., Kiravittaya, S., Denker, U., Nguyen, B. Y., & Schmidt, O. G. (2006). Strain distribution in a transistor using self-assembled SiGe islands in source and drain regions. Applied Physics Letters, 88(25): 253108.


Cite as: https://hdl.handle.net/21.11116/0000-000F-0133-6
Abstract
We propose to improve a p-channel metal-oxide-semiconductor
field-effect transistor using laterally closely spaced double
self-assembled SiGe/Si islands as drain and source to create a high
hole mobility channel. The strain distribution in and around the
channel is calculated for two realistic island geometries with various
distances between the islands. A compressive strain of more than 1% in
the channel can be achieved for SiGe islands and small distance between
these two islands. We demonstrate that the proposed double SiGe/Si
island structure can be realized by epitaxial growth on patterned
substrates designed for static random access memory cell. (c) 2006
American Institute of Physics.