Strained SiGe islands on Si(001): Evolution, motion, dissolution, and plastic 
relaxation

Rastelli, A.; Stoffel, M.; Denker, U.; Merdzhanova, T.; Schmidt, O. G.

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Strained SiGe islands on Si(001): Evolution, motion, dissolution, and plastic relaxation

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Rastelli, A.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Stoffel, M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Denker, U.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Merdzhanova, T.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Rastelli, A., Stoffel, M., Denker, U., Merdzhanova, T., & Schmidt, O. G. (2006). Strained SiGe islands on Si(001): Evolution, motion, dissolution, and plastic relaxation. physica status solidi (a), 203(14), 3506-3511.

Cite as: https://hdl.handle.net/21.11116/0000-000F-013F-A

Abstract

We report on the morphological evolution of strained SiGe islands
epitaxially grown on Si(001). After reviewing the morphological
transitions undergone by the islands as their size changes, we present
recent results obtained by an approach consisting of "reading the
footprints" left by the islands on the Si substrate during growth. Such
footprints, which we investigate by a combination of scanning probe
microscopy and selective wet chemical etching, are trenches carved in
the Si substrate. The study of these trenches allows us to discuss
general phenomena occurring during growth or post-growth annealing,
such as coarsening and morphological transitions, surface-mediated
material intermixing and lateral island motion, evolution of
plastically relaxed islands and effect on the islands surrounding them.
(c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.