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Structural investigation of hierarchically self-assembled GaAs/AlGaAs quantum dots

MPS-Authors
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Rastelli,  A.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280485

Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Lenz, A., Timm, R., Eisele, H., Ivanova, L., Martin, D., Vosseburger, V., et al. (2006). Structural investigation of hierarchically self-assembled GaAs/AlGaAs quantum dots. physica status solidi (b), 243(15), 3976-3980.


Cite as: https://hdl.handle.net/21.11116/0000-000F-011B-2
Abstract
Recent investigations of self-organized unstrained inverted GaAs/AlGaAs
quantum dots, prepared by a combination of Stranski-Krastanov growth
mode and an in situ etching technique, show GaAs quantum dots with
large confinement energy and high size homogeneity. Here we present
first cross-sectional scanning tunneling microscopy data of these
quantum dots, characterized by a lateral extension of about 35 nm,
heights of about 5-6 nm, and a reversed truncated pyramidal shape. We
further observe a decomposition of the AlGaAs host layers and a
roughening of the AlGaAs/GaAs interfaces. (C) 2006 WILEY-VCH Verlag
GmbH & Co. KGaA, Weinheim.