Structure and morphology of 4H-SiC wafer surfaces after H2-etching

Soubatch, S.; Saddow, S. E.; Rao, S. P.; Lee, W. Y.; Konuma, M.; Starke, U.

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Structure and morphology of 4H-SiC wafer surfaces after H₂-etching

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Soubatch, S.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;

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Lee, W. Y.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;

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Konuma, M.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Starke, U.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;

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Soubatch, S., Saddow, S. E., Rao, S. P., Lee, W. Y., Konuma, M., & Starke, U. (2005). Structure and morphology of 4H-SiC wafer surfaces after H₂-etching. Materials Science Forum, 483, 761-764.

Cite as: https://hdl.handle.net/21.11116/0000-000E-F9E5-7

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