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Directed growth and electrical-transport properties of carbon nanotiabe architectures on indium tin oxide films on silicon-based substrates

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Ramanath,  G.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Agrawal, S., Frederick, M. J., Lupo, F., Victor, P., Nalamasu, O., & Ramanath, G. (2005). Directed growth and electrical-transport properties of carbon nanotiabe architectures on indium tin oxide films on silicon-based substrates. Advanced Functional Materials, 15(12), 1922-1926.


Cite as: https://hdl.handle.net/21.11116/0000-000F-0135-4
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