Strain-mediated lateral SiGe island motion in single and stacked layers

Stoffel, M.; Rastelli, A.; Kiravittaya, S.; Schmidt, O. G.

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Strain-mediated lateral SiGe island motion in single and stacked layers

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Stoffel, M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Rastelli, A.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Kiravittaya, S.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Stoffel, M., Rastelli, A., Kiravittaya, S., & Schmidt, O. G. (2005). Strain-mediated lateral SiGe island motion in single and stacked layers. Physical Review B, 72(20): 205411.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FDAC-4

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