Temperature dependent sign of the interaction-induced magnetoresistance in a 
n-Si/SiGe heterostructures

Renard, V.; Olshanetsky, E. B.; Kvon, Z. D.; Portal, J. C.; Woods, N. J.; Zhang, J.; Harris, J. J.

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Temperature dependent sign of the interaction-induced magnetoresistance in a n-Si/SiGe heterostructures

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Olshanetsky, E. B.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Portal, J. C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Zhang, J.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Department Quantum Many-Body Theory (Walter Metzner), Max Planck Institute for Solid State Research, Max Planck Society;

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Renard, V., Olshanetsky, E. B., Kvon, Z. D., Portal, J. C., Woods, N. J., Zhang, J., et al. (2005). Temperature dependent sign of the interaction-induced magnetoresistance in a n-Si/SiGe heterostructures. In Proceedings of the 27th International Conference on the Physics of Semiconductors (pp. 487-488). New York, USA: American Institute of Physics.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FA7C-E

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