Tunneling between two-dimensional hole layers in GaAs

Morozova, E. N.; Renard, V.; Dubrovskii, Y. V.; Volkov, V. A.; Eaves, L.; Portal, J. C.; Makarovskii, O. N.; Henini, M.; Hill, G.

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Tunneling between two-dimensional hole layers in GaAs

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Portal, J. C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Morozova, E. N., Renard, V., Dubrovskii, Y. V., Volkov, V. A., Eaves, L., Portal, J. C., et al. (2005). Tunneling between two-dimensional hole layers in GaAs. In Proceedings of the 13th International Symposium on Nanostructures: Physics and Technology (pp. 169-169). St Petersburg, Russia: Ioffe Institute.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FA70-A

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