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Band-structure modulation in carbon nanotube T junctions

MPS-Authors
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Chiu,  P. W.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Kaempgen,  M.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280443

Roth,  S.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Chiu, P. W., Kaempgen, M., & Roth, S. (2004). Band-structure modulation in carbon nanotube T junctions. Physical Review Letters, 92(24): 246802.


Cite as: https://hdl.handle.net/21.11116/0000-000E-FFBD-F
Abstract
We show that the band structure of metallic carbon nanotubes can be
dramatically altered by the local electrostatic field. This is realized
by coupling chemically functionalized nanotubes to form T junctions.
The bar of the T is the conducting channel and the leg of the T is used
for local gating. Transport measurements reveal that an energy gap
develops upon application of a local electric field in both devices
with or without linker molecules at the junction. We propose that the
mechanism of the band gap modulation in the T junctions without linker
molecules is the field effect, with the linker molecules introducing
additional electromechanical and chemical effects.