English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Journal Article

Corrections to conductivity on the metallic side of metal-insulator transition in n-Si/SiGe heterostructures

MPS-Authors
/persons/resource/persons280358

Ol'shanetskiĭ,  E. B.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280400

Portal,  J. C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280713

Zhang,  J.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Department Quantum Many-Body Theory (Walter Metzner), Max Planck Institute for Solid State Research, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Renard, V., Ol'shanetskiĭ, E. B., Kvon, Z. D., Portal, J. C., Woods, N. J., Zhang, J., et al. (2004). Corrections to conductivity on the metallic side of metal-insulator transition in n-Si/SiGe heterostructures. Physica E, 22(1-3), 256-259.


Cite as: https://hdl.handle.net/21.11116/0000-000E-FEFA-B
Abstract
We report the first observation of the metal-insulator transition (MIT)
in a two-dimensional electron gas (2DEG) in a Si/SiGe heterostructure
at zero field. We have performed an analysis of the temperature
dependence of conductivity and magnetoresistance of our sample on the
metallic side of the transition using recent theories. (C) 2003
Elsevier B.V. All rights reserved.