Electronic structure of InAs/GaAs self-assembled quantum dots studied by 
high-excitation luminescence in magnetic fields up to 73 T

Smirnov, D.; Raymond, S.; Studenikin, S.; Babinski, A.; Leotin, J.; Frings, P.; Potemski, M.; Sachrajda, A.

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Electronic structure of InAs/GaAs self-assembled quantum dots studied by high-excitation luminescence in magnetic fields up to 73 T

MPG-Autoren

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Babinski, A.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Potemski, M.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Zitation

Smirnov, D., Raymond, S., Studenikin, S., Babinski, A., Leotin, J., Frings, P., et al. (2004). Electronic structure of InAs/GaAs self-assembled quantum dots studied by high-excitation luminescence in magnetic fields up to 73 T. Physica B, 346-347, 432-436.

Zitierlink: https://hdl.handle.net/21.11116/0000-000E-FF0D-6

Zusammenfassung

We report on high-excitation photoluminescence (PL) measurements of an
ensemble of InAs/GaAs self-assembled quantum dots with large
inter-shell spacing (75 meV) in magnetic fields up to 73 T. The PL
spectra show a complex picture of levels splitting and crossings. A
simple two-band single-particle model provides a good approximation to
explain the observed magneto-PL spectra. (C) 2003 Elsevier B.V. All
rights reserved.