Electronic structure of shallow impurities in GaN studied via bound exciton 
magnetooptics

Stępniewski, R.; Wysmołek, A.; Potemski, M.

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Electronic structure of shallow impurities in GaN studied via bound exciton magnetooptics

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Wysmołek, A.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Potemski, M.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Stępniewski, R., Wysmołek, A., & Potemski, M. (2004). Electronic structure of shallow impurities in GaN studied via bound exciton magnetooptics. physica status solidi (a), 201(2), 181-189.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FF08-B

Abstract

We report the photoluminescence experiments on high quality GaN samples
in high magnetic fields. A detailed analysis of the recombination due
to excitons bound to neutral donors and acceptors is presented. Special
attention is focussed on transitions for which the impurity is left in
the excited state (so called two electron satellites). These results
show a rich energetic structure of excited states of the impurity
involved in such a recombination process. The magnetic field dependence
of the energy structure of the shallow neutral donor and acceptor in
GaN is then discussed. The validity of the effective mass approximation
for shallow impurities in wide gap semiconductors is examined. (C) 2004
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.