Electron-phonon interaction in a doped GaAs quantum well

Faugeras, C.; Martinez, G.; Riedel, A.; Hey, R.; Friedland, K. J.

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Electron-phonon interaction in a doped GaAs quantum well

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Faugeras, C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Martinez, G.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Faugeras, C., Martinez, G., Riedel, A., Hey, R., & Friedland, K. J. (2004). Electron-phonon interaction in a doped GaAs quantum well. Physica E, 22(1-3), 586-589.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FF13-E

Abstract

We investigate the cyclotron resonance (CR) on a single GaAs quantum
well containing a two-dimensional electron gas (7.0 X 10(11) cm(-2)),
in magnetic fields up to 28 T in order to study the resonant polaron
coupling. When the normal to the surface of the sample is in the same
direction as that of light propagation, we do not observe an anomaly of
the CR absorption in the optical phonon range of energy. When the
normal of the sample is tilted with respect to the light propagation
direction (and with the magnetic field direction) we observe a pinning
of the CR peak at an energy lower than that of the longitudinal optical
(LO) phonon energy. This mode is identified as the coupled intersubband
plasmon-LO phonon of the quantum well. (C) 2003 Elsevier B.V. All
rights reserved.