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Journal Article

Floating-zone growth and characterization of high-quality Bi2Sr2-xLaxCuO6+δ single crystals

MPS-Authors
/persons/resource/persons280235

Liang,  B.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Crystal Growth (Masahiko Isobe), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280238

Lin,  C. T.
Scientific Facility Crystal Growth (Masahiko Isobe), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Liang, B., & Lin, C. T. (2004). Floating-zone growth and characterization of high-quality Bi2Sr2-xLaxCuO6+δ single crystals. Journal of Crystal Growth, 267(3-4), 510-516.


Cite as: https://hdl.handle.net/21.11116/0000-000E-FE74-2
Abstract
High-quality Bi2Sr2-xLaxCuO6+delta (0 less than or equal to x less than
or equal to 0.64) (La-doped Bi-2201) single crystals sized up to
similar to20 x 5 x 1.0 mm(3) were successfully grown using the
travelling-solvent floating-zone method. The effect of La substitution
of Sr on the crystal growth, structure and superconducting properties
was studied. Both X-ray diffraction (XRD) and neutron scattering
measurements demonstrate the high quality of these crystals with
mosaicity less than 0.5degrees. Powder XRD analysis indicates that the
crystals possess the orthorhombic structure. The La-free Bi-2201
crystals do not show superconductivity down to 2 K, while the La-doped
crystals exhibit superconductivity with transition temperature T-c =
20,28, 33,15 and 12 K for samples with actual La content x = 0.28,
0.36, 0.43, 0.57 and 0.64, respectively. Upon decreasing carrier
concentration (increasing La content x), the in-plane resistivity
rho(ab) shows a change from metallic behaviour to a semiconductor-like
behaviour in the low temperature region. (C) 2004 Elsevier B.V. All
rights reserved.