Fröhlich mass in GaAs-based structures

Faugeras, C.; Martinez, G.; Riedel, A.; Hey, R.; Friedland, K. J.; Bychkov, Y.

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Fröhlich mass in GaAs-based structures

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Faugeras, C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Martinez, G.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Bychkov, Y.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Faugeras, C., Martinez, G., Riedel, A., Hey, R., Friedland, K. J., & Bychkov, Y. (2004). Fröhlich mass in GaAs-based structures. Physical Review Letters, 92(10): 107403.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FE7C-A

Abstract

The Frohlich interaction is one of the main electron-phonon intrinsic
interactions in polar materials originating from the coupling of one
itinerant electron with the macroscopic electric field generated by any
longitudinal optical (LO) phonon. Infrared magnetoabsorption
measurements of doped GaAs quantum well structures have been carried
out in order to test the concept of Frohlich interaction and polaron
mass in such systems. These new experimental results lead one to
question the validity of this concept in a real system.