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Journal Article

Hole subbands and Landau levels in p-type single AlxGa1-xAs/GaAs heterostructures

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Byszewski,  M.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Potemski,  M.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Ryczko, K., Kubisa, M., Bryja, L., Misiewicz, J., Stępniewski, R., Byszewski, M., et al. (2004). Hole subbands and Landau levels in p-type single AlxGa1-xAs/GaAs heterostructures. Physica B, 346-347, 451-454.


Cite as: https://hdl.handle.net/21.11116/0000-000E-FE64-4
Abstract
We studied the energy band structure of two-dimensional holes in p-type
single AlxGa1-xAs/GaAs heterojunctions under a strong magnetic field up
to 14 T. The electric field present in investigated structures near the
interfaces produces a mixing of heavy and light hole states. This
results in a strong nonparabolicity and anisotropy of energy levels and
their non-linear behavior under an external magnetic field. We
calculated energies and wave functions of hole subbands as a function
of magnetic field in a Faraday configuration employing a realistic
model of potential distribution and using new numerical method
described in Kubisa et al., Phys. Rev. B 67 (2003) 035305. The
theoretical results were compared with results of low-temperature
photoluminescence measurements for samples with different 2D hole
densities and a very good agreement was obtained. (C) 2004 Elsevier
B.V. All rights reserved.