In-plane magnetic field-dependent magnetoresistance of gated asymmetric double 
quantum wells

Krupko, Y.; Smrčka, L.; Vašek, P.; Svoboda, P.; Cukr, M.; Jansen, L.

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In-plane magnetic field-dependent magnetoresistance of gated asymmetric double quantum wells

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Krupko, Y.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Jansen, L.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Krupko, Y., Smrčka, L., Vašek, P., Svoboda, P., Cukr, M., & Jansen, L. (2004). In-plane magnetic field-dependent magnetoresistance of gated asymmetric double quantum wells. Physica E, 22(1-3), 44-47.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FE9C-5

Abstract

We have investigated experimentally the magnetoresistance of strongly
asymmetric double wells. The structures were prepared by inserting a
thin Al0.3Ga0.7As barrier into the GaAs buffer layer of a standard
modulation-doped GaAs/Al(0.3)Ga(0.7)AS heterostructure. The resulting
double-well system consists of a nearly rectangular well and of a
triangular well coupled by tunneling through the thin barrier. With a
proper choice of the barrier parameters one can control the occupancy
of the two wells and of the two lowest (bonding and antibonding)
subbands. The electron properties can be further influenced by applying
front- or back-gate voltage. (C) 2003 Elsevier B.V. All rights reserved.