Magnetoconductivity of a spin-polarized two-dimensional electron gas near the 
(111) silicon surface

Estibals, O.; Kvon, Z. D.; Gusev, G. M.; Arnaud, G.; Portal, J. C.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Magnetoconductivity of a spin-polarized two-dimensional electron gas near the (111) silicon surface

MPS-Authors

/persons/resource/persons280400

Portal, J. C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Estibals, O., Kvon, Z. D., Gusev, G. M., Arnaud, G., & Portal, J. C. (2004). Magnetoconductivity of a spin-polarized two-dimensional electron gas near the (111) silicon surface. Physica E, 22(1-3), 446-449.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FB9E-6

Abstract

The magnetoresistance of a disordered and highly interacting
two-dimensional electron gas (2DEG) in a silicon (I 1 1) MOSFET has
been measured in the presence of a magnetic field parallel to the
surface of the 2DEG. For high electronic densities, a linear negative
magnetoconductance has been observed. The field of complete spin
saturation has been found to depend linearly on the density. From this
result, we have determined the g(*)m(*) product, which has been shown
to decrease as the density is reduced. (C) 2003 Published by Elsevier
B.V.