Magnetoconductivity of a spin-polarized two-dimensional electron gas near the 
(111) silicon surface

Estibals, O.; Kvon, Z. D.; Gusev, G. M.; Arnaud, G.; Portal, J. C.

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Magnetoconductivity of a spin-polarized two-dimensional electron gas near the (111) silicon surface

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Portal, J. C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Zitation

Estibals, O., Kvon, Z. D., Gusev, G. M., Arnaud, G., & Portal, J. C. (2004). Magnetoconductivity of a spin-polarized two-dimensional electron gas near the (111) silicon surface. Physica E, 22(1-3), 446-449.

Zitierlink: https://hdl.handle.net/21.11116/0000-000E-FB9E-6

Zusammenfassung

The magnetoresistance of a disordered and highly interacting
two-dimensional electron gas (2DEG) in a silicon (I 1 1) MOSFET has
been measured in the presence of a magnetic field parallel to the
surface of the 2DEG. For high electronic densities, a linear negative
magnetoconductance has been observed. The field of complete spin
saturation has been found to depend linearly on the density. From this
result, we have determined the g(*)m(*) product, which has been shown
to decrease as the density is reduced. (C) 2003 Published by Elsevier
B.V.