Magnetoconductivity of a spin-polarized two-dimensional electron gas near the 
(111) silicon surface

Estibals, O.; Kvon, Z. D.; Gusev, G. M.; Arnaud, G.; Portal, J. C.

アイテム詳細

登録内容を編集ファイル形式で保存

一時保存へ追加

タグ情報を表示リリース履歴を表示詳細要約

公開

学術論文

Magnetoconductivity of a spin-polarized two-dimensional electron gas near the (111) silicon surface

MPS-Authors

/persons/resource/persons280400

Portal, J. C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

External Resource

There are no locators available

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

フルテキスト (公開)

公開されているフルテキストはありません

付随資料 (公開)

There is no public supplementary material available

引用

Estibals, O., Kvon, Z. D., Gusev, G. M., Arnaud, G., & Portal, J. C. (2004). Magnetoconductivity of a spin-polarized two-dimensional electron gas near the (111) silicon surface. Physica E, 22(1-3), 446-449.

引用: https://hdl.handle.net/21.11116/0000-000E-FB9E-6

要旨

The magnetoresistance of a disordered and highly interacting
two-dimensional electron gas (2DEG) in a silicon (I 1 1) MOSFET has
been measured in the presence of a magnetic field parallel to the
surface of the 2DEG. For high electronic densities, a linear negative
magnetoconductance has been observed. The field of complete spin
saturation has been found to depend linearly on the density. From this
result, we have determined the g(*)m(*) product, which has been shown
to decrease as the density is reduced. (C) 2003 Published by Elsevier
B.V.