Magneto-photoluminescence study of type-II charge confinement in epitaxially 
grown GaInP2

Hayne, A.; Maes, J.; Manz, Y. M.; Schmidt, O. G.; Moshchalkov, V. V.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP₂

MPS-Authors

/persons/resource/persons280277

Manz, Y. M.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280485

Schmidt, O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Hayne, A., Maes, J., Manz, Y. M., Schmidt, O. G., & Moshchalkov, V. V. (2004). Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP₂. Physica E, 21(2-4), 257-260.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FBAA-8

Abstract

We have studied the photoluminescence from GaInP2 grown by molecular
beam epitaxy as a function of laser power, magnetic field and
temperature. We show that the single luminescence peak observed in such
samples arises from weakly bound (type-II) excitons in which the
electrons are localised and the holes are free, and that it is the same
as the additional low-energy peak typically observed in strongly
CuPt-ordered GaInP2 grown by chemical vapour deposition techniques. We
propose that the electron is confined in In-rich regions of the sample
and the hole is delocalised by coupling between heavy-and light-hole
bands. (C) 2003 Elsevier B.V. All rights reserved.