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Magnetotransport in high-g-factor low-density two-dimensional electron systems confined in In0.75Ga0.25As/In0.75Al0.25As quantum wells

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Maude,  D. K.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Desrat, W., Giazotto, F., Pellegrini, V., Beltram, F., Capotondi, F., Biasiol, G., et al. (2004). Magnetotransport in high-g-factor low-density two-dimensional electron systems confined in In0.75Ga0.25As/In0.75Al0.25As quantum wells. Physical Review B, 69(24): 245324.


Cite as: https://hdl.handle.net/21.11116/0000-000E-FBAE-4
Abstract
We report magnetotransport measurements on high-mobility
two-dimensional electron systems (2DESs) confined in
In0.75Ga0.25As/In0.75Al0.25As single quantum wells. Several quantum
Hall states are observed in a wide range of temperatures and electron
densities, the latter controlled by a gate voltage down to values of
1x10(11) cm(-2). A tilted-field configuration is used to induce Landau
level crossings and magnetic transitions between quantum Hall states
with different spin polarizations. A large filling factor dependent
effective electronic g-factor is determined by the coincidence method
and cyclotron resonance measurements. From these measurements the
change in exchange-correlation energy at the magnetic transition is
deduced. These results demonstrate the impact of many-body effects in
tilted-field magnetotransport of high-mobility 2DESs confined in
In0.75Ga0.25As/In0.75Al0.25As quantum wells. The large tunability of
electron density and effective g-factor, in addition, make this
material system a promising candidate for the observation of a large
variety of spin-related phenomena.