Magnetotransport of electrons in overfull quantum well

Kvon, Z. D.; Tkachenko, V. A.; Tkachenko, O. A.; Toropov, A. I.; Bakarov, A. K.; Renard, V.; Portal, J. C.

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Magnetotransport of electrons in overfull quantum well

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Portal, J. C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Kvon, Z. D., Tkachenko, V. A., Tkachenko, O. A., Toropov, A. I., Bakarov, A. K., Renard, V., et al. (2004). Magnetotransport of electrons in overfull quantum well. Physica E, 21(2-4), 742-746.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FBA2-0

Abstract

We report magnetotransport properties of electrons in a new kind of
two-dimensional electron system (2DES)-a narrow single quantum well
with electron density so large that the electrons splash out of the
well. We show that the system is a two-component 2D electron gas
consisting of very low mobility (mu = x 10(3) cm(2) V-1 s(-1)) main
part of the electrons and very small fraction (about 1% of all) of the
electrons with much higher (10 times) mobility. The anomalous behavior
of the magnetoresistance p(xx) and Hall resistance p(xy) of this system
was observed. The sharp change of the transport properties at the
moment of overfilling of the quantum well gives the possibility to
determine the value of the band offset DeltaE(c) on the interface
Al0.3Ga0.7As/GaAs using the results of the self-consistent calculation
of the energy diagram of the studied structure. As the result we have
obtained DeltaE(c) = (0.1 8-0.20)eV. This value is significantly less
than the well-known DeltaE(c) = 0.24 eV found in optical experiments.
(C) 2003 Elsevier B.V. All rights reserved.