New insights into the plateau-insulator transition in the quantum Hall regime

Ponomarenko, L. A.; de Lang, D. T. N.; de Visser, A.; Maude, D.; Zvonkov, B. N.; Lunin, R. A.; Pruisken, A. M. M.

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New insights into the plateau-insulator transition in the quantum Hall regime

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Maude, D.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Ponomarenko, L. A., de Lang, D. T. N., de Visser, A., Maude, D., Zvonkov, B. N., Lunin, R. A., et al. (2004). New insights into the plateau-insulator transition in the quantum Hall regime. Physica E, 22(1-3), 236-239.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FAAC-7

Abstract

We have measured the quantum critical behavior of the plateau-insulator
(PI) transition in a low-mobility InGaAs/GaAs quantum well. The
longitudinal resistivity measured for two different values of the
electron density follows an exponential law, from which we extract
critical exponents kappa = 0.54 and 0.58, in good agreement with the
value (kappa = 0.57) previously obtained for an InGaAs/InP
heterostructure. This provides evidence for a non-Fermi liquid critical
exponent. By reversing the direction of the magnetic field we find that
the averaged Hall resistance remains quantized at the plateau value
h/e(2) through the PI transition. From the deviations of the Hall
resistance from the quantized value, we obtain the corrections to
scaling. (C) 2003 Elsevier B.V. All rights reserved.