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Nonlinear transport in p-type SiGe quantum well structure containing Ge quantum dots

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Denker,  U.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280485

Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Jansen,  A. G. M.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Haug,  R. J.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Haendel, K. M., Denker, U., Schmidt, O. G., Jansen, A. G. M., & Haug, R. J. (2004). Nonlinear transport in p-type SiGe quantum well structure containing Ge quantum dots. Physica E, 21(2-4), 487-490.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F633-3
Abstract
We use magneto-transport spectroscopy to study a dramatic instability
between a low and high conductivity mode in Si/SiGe-based resonant
tunneling diodes with an embedded layer of self-assembled Ge hut
cluster quantum dots in the Si barrier. In the low current regime a
simple activation-type behavior with an astonishingly low activation
energy in the order of 0.1 meV is determined. In the high current
regime a region of negative differential conduction can be observed. We
discuss the influence of different layer structures and magnetic
fields. (C) 2003 Elsevier B.V. All rights reserved.