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Journal Article

Radiation-induced oscillatory Hall effect in high-mobility GaAs/AlxGa1-xAs devices

MPS-Authors
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Mani,  R. G.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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von Klitzing,  K.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Smet,  J. H.
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Mani, R. G., Narayanamurti, V., von Klitzing, K., Smet, J. H., Johnson, W. B., & Umansky, V. (2004). Radiation-induced oscillatory Hall effect in high-mobility GaAs/AlxGa1-xAs devices. Physical Review B, 69(16): 161306.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F65D-5
Abstract
We examine the radiation induced modification of the Hall effect in
high-mobility GaAs/AlxGa1-xAs devices that exhibit vanishing resistance
under microwave excitation. The modification in the Hall effect upon
irradiation is characterized by (a) a small reduction in the slope of
the Hall resistance curve with respect to the dark value, (b) a
periodic reduction in the magnitude of the Hall resistance R-xy that
correlates with an increase in the diagonal resistance R-xx, and (c) a
Hall resistance correction that disappears as the diagonal resistance
vanishes.