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Journal Article

Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin-splitting in high-mobility GaAs/AlxGa1-xAs devices

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Mani,  R. G.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Smet,  J. H.
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280605

von Klitzing,  K.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Mani, R. G., Smet, J. H., von Klitzing, K., Narayanamurti, V., Johnson, W. B., & Umansky, V. (2004). Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin-splitting in high-mobility GaAs/AlxGa1-xAs devices. Physical Review B, 69(19): 193304.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F63F-7
Abstract
We suggest an approach for characterizing the zero-field spin splitting
of high mobility two-dimensional electron systems, when beats are not
readily observable in the Shubnikov-de Haas effect. The zero-field spin
splitting and the effective magnetic field seen in the reference frame
of the electron are evaluated from a quantitative study of beats
observed in radiation-induced magnetoresistance oscillations.