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Spin and interaction effects in Shubnikov-de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures

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Fal'ko,  V. I.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Maude,  D.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Knap, W., Fal'ko, V. I., Frayssinet, E., Lorenzini, P., Grandjean, N., Maude, D., et al. (2004). Spin and interaction effects in Shubnikov-de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures. Journal of Physics: Condensed Matter, 16(20), 3421-3432.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F5C3-1
Abstract
We present the results of high magnetic field (up to 30 T) and
temperature (50 mK-80 K) dependent transport measurements on a 2DEG in
GaN/AlGaN heterojunctions. A high mobility (above 60000 cm(2) V-1 s(-1)
at 4 K) 2DEG was obtained by MBE growth of dislocation free GaN and
AlGaN layers on semi-insulating bulk GaN substrates. A cyclotron gap
and spin splitting are observed. Results from two studies are reported:
(i) a tilted field experiment determining the 2DEG g*-factor from the
angular modulation of the amplitude of SdH oscillations; (ii) quantum
Hall effect measurements determining the activation energies for spin
and cyclotron energy gaps at even and odd filling factors. The observed
'cyclotron gap' enhancement is attributed to the effect of
electron-electron interaction and it is estimated using the model of a
2D-screened Coulomb potential. The analytic result for the enhancement
of the,cyclotron gap' yields an addition to the activation energy,
epsilon(even)(x) approximate to kappa(h) over bar omega(c), K = 1.06
roota(2)n(e), which is proportional to the magnetic field and resembles
the mass renormalization.