SrBi2Nb2O9 thin films epitaxially grown on Pt epitaxial bottom layers: 
structural characteristics and nanoscale characterization of the ferroelectric 
behaviour by AFM

Duclère, J. R.; Guilloux-Viry, M.; Bouquet, V.; Perrin, A.; Gautier, B.

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SrBi₂Nb₂O₉ thin films epitaxially grown on Pt epitaxial bottom layers: structural characteristics and nanoscale characterization of the ferroelectric behaviour by AFM

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Duclère, J. R.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Duclère, J. R., Guilloux-Viry, M., Bouquet, V., Perrin, A., & Gautier, B. (2004). SrBi₂Nb₂O₉ thin films epitaxially grown on Pt epitaxial bottom layers: structural characteristics and nanoscale characterization of the ferroelectric behaviour by AFM. Annalen der Physik, 13(1-2), 35-38.

Cite as: https://hdl.handle.net/21.11116/0000-000E-F8BD-6

Abstract

SrBi2Nb2O9 (SBN) films were grown by pulsed laser deposition on (400)
and (110) Pt epitaxial bottom layers. In both cases x-ray diffraction
evidenced the epitaxial growth of SBN in spite of the coexistence of
mainly two orientations. SBN films on (100) Pt present usually a
dominant (001) orientation with the (115) one. AFM piezoresponse images
agree with the crystallographic data, i.e. only the (115) oriented
grains show a piezoelectric contrast. The SBN films grown on (I 10) Pt
lead to a more homogenous piezoresponse imaging, in agreement with the
preferential (116) orientation and the microstructure. (C) 2004
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.