Influence of layer structure on the current-voltage characteristics of Si/SiGe 
interband tunneling diodes

Khorenko, E.; Prost, W.; Tegude, F. J.; Stoffel, M.; Duschl, R.; Dashiell, M. W.; Schmidt, O. G.

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Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes

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Stoffel, M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Duschl, R.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Dashiell, M. W.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Khorenko, E., Prost, W., Tegude, F. J., Stoffel, M., Duschl, R., Dashiell, M. W., et al. (2004). Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes. Journal of Applied Physics, 96, 3848-3851.

Cite as: https://hdl.handle.net/21.11116/0000-000E-F7EB-3

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