Shape and composition change of Ge dots due to Si capping

Kirfel, O.; Müller, E.; Grützmacher, D.; Kern, K.; Hesse, A.; Stangl, J.; Holý, V.; Bauer, G.

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Shape and composition change of Ge dots due to Si capping

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Kern, K.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Kirfel, O., Müller, E., Grützmacher, D., Kern, K., Hesse, A., Stangl, J., et al. (2004). Shape and composition change of Ge dots due to Si capping. Applied Surface Science, 224, 139-142.

Cite as: https://hdl.handle.net/21.11116/0000-000E-F5AF-9

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