Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN

Korona, K. P.; Doradzinski, R.; Palczewska, M.; Pietras, M.; Kaminska, M.; Kuhl, J.

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Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN

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Korona, K. P.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Kuhl, J.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Korona, K. P., Doradzinski, R., Palczewska, M., Pietras, M., Kaminska, M., & Kuhl, J. (2003). Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN. physica status solidi (b), 235(1), 40-43.

Cite as: https://hdl.handle.net/21.11116/0000-000E-F939-A

Abstract

Time-resolved photoluminescence (TRPL) and electron
paramagnetic resonance (EPR) studies of Zn acceptor in GaN are
presented. The EPR measurements revealed a strong line, which
was ascribed to either an isolated Zn acceptor or to a complex
defect involving Zn. Two photoluminescence lines were analyzed:
the well-known line of exciton bound to Mg acceptor, A(Mg)X at
3.467 eV (8 K), and a new line that was ascribed to exciton
bound to Zn acceptor, A(Zn)X at 3.456 eV. The radiative decay
time of the A(Zn)X was about 1.4 ns, which was longer than that
of the A(Mg)X line. The longer radiative lifetime suggested a
smaller radius of the A(Zn)X wave function.