Role of disorder on transport in boron-doped multiwalled carbon nanotubes

Krstic, V.; Blumentritt, S.; Muster, J.; Roth, S.; Rubio, A.

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Role of disorder on transport in boron-doped multiwalled carbon nanotubes

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Krstic, V.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Blumentritt, S.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Muster, J.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Roth, S.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Krstic, V., Blumentritt, S., Muster, J., Roth, S., & Rubio, A. (2003). Role of disorder on transport in boron-doped multiwalled carbon nanotubes. Physical Review B, 67(4): 041401.

Cite as: https://hdl.handle.net/21.11116/0000-000E-F941-0

Abstract

Electrical transport measurements on boron-doped multiwalled
carbon nanotubes deposited on top of predefined electrode
patterns have been performed. The temperature dependence of the
conductance reveals through two-point configuration, the
appearance of a zero-bias anomaly which was found to be not
compatible with the existence of a Luttinger-liquid-like state
in the doped multiwalled carbon nanotubes. The experimental
findings indicate that, in order to properly interpret the
charge transport properties of multiwalled carbon nanotubes,
the doping as well as the energy window in which the
experiments are performed are crucial points.