English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Journal Article

Photoluminescence investigations of two-dimensional hole Landau levels in p-type single AlxGa1-xAs/GaAs heterostructures

MPS-Authors
/persons/resource/persons279764

Bardot,  C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280401

Potemski,  M.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Kubisa, M., Bryja, L., Ryczko, K., Misiewicz, J., Bardot, C., Potemski, M., et al. (2003). Photoluminescence investigations of two-dimensional hole Landau levels in p-type single AlxGa1-xAs/GaAs heterostructures. Physical Review B, 67(3): 035305.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F923-2
Abstract
We study the energy structure of two-dimensional holes in p-
type single Al1-xGaxAs/GaAs heterojunctions under a
perpendicular magnetic field. Photoluminescence measurments
with low densities of excitation power reveal rich spectra
containing both free and bound-carrier transitions. The
experimental results are compared with energies of valence-
subband Landau levels calculated using a numerical procedure
and good agreement is achieved. Additional lines observed in
the energy range of free-carrier recombinations are attributed
to excitonic transitions. We also consider the role of many-
body effects in photoluminescence spectra.