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Journal Article

Nonlinear hole transport through a submicron-size channel

MPS-Authors
/persons/resource/persons280342

Neumann,  A.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280292

Maude,  D. K.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280400

Portal,  J. C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Makarovsky, O., Neumann, A., Martin, A. M., Turyanska, L., Patané, A., Eaves, L., et al. (2003). Nonlinear hole transport through a submicron-size channel. Applied Physics Letters, 82(6), 925-927.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F917-0
Abstract
We investigate hole transport through a submicron-size channel
fabricated from a modulation-doped p-type GaAs/(AlGa)As single-
quantum-well heterostructure. The intense electric field in the
channel accelerates the holes beyond the inflection point of
the lowest energy subband dispersion curve. This leads to
current saturation and negative differential conduction effects
in the current-voltage characteristics. (C) 2003 American
Institute of Physics.