Free-to-bound and interband recombination in the photoluminescence of a dense 
two-dimensional electron gas

Babinski, A.; Potemski, M.; Shtrikman, H.

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Free-to-bound and interband recombination in the photoluminescence of a dense two-dimensional electron gas

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Babinski, A.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Potemski, M.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Babinski, A., Potemski, M., & Shtrikman, H. (2002). Free-to-bound and interband recombination in the photoluminescence of a dense two-dimensional electron gas. Physical Review B, 65(23): 233307.

Cite as: https://hdl.handle.net/21.11116/0000-000E-ED59-4

Abstract

Low-temperature photoluminescence (PL) measurements of a
pseudomorphic modulation-doped GaAs/In0.2Ga0.8As/Al0.2Ga0.8As
quantum well containing a dense two-dimensional electron gas
(n(s)=1.6x10(12) cm(-2)) in a magnetic field are reported. Two
well-defined high-energy cutoffs of the PL spectra are
observed. Results of the magnetospectroscopic study indicate
that these cutoffs are due to the recombination of free
electrons from the vicinity of the Fermi level with localized
and free holes, respectively. The localization energy of the
bound hole is determined. It is shown that the free-to-bound
recombination is much more effective that the interband
recombination in the investigated structure.