Temperature dependence of Raman scattering and luminescence of the disordered Zn
0.5Cd0.5Se alloy

Camacho, J.; Loa, I.; Cantarero, A.; Hernández-Calderón, I.

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Temperature dependence of Raman scattering and luminescence of the disordered Zn_0.5Cd_0.5Se alloy

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Camacho, J.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Loa, I.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Camacho, J., Loa, I., Cantarero, A., & Hernández-Calderón, I. (2002). Temperature dependence of Raman scattering and luminescence of the disordered Zn_0.5Cd_0.5Se alloy. Microelectronics Journal, 33(4), 349-353.

Cite as: https://hdl.handle.net/21.11116/0000-000E-ECAB-8

Abstract

We report on luminescence and Raman scattering measurements of
zineblende Zn0.5Cd0.5Se thin film grown by molecular beam
epitaxy. From the luminescence data of the exciton peak, the
dependence of the energy gap with temperature [dE(g)/dT = (4.35
+/- 0.01) X 10(-4) meV/K] and zero-temperature phonon
renormalization energy (DeltaE(0) = 30 +/- 1 meV) have been
obtained. The broadening of the excitonic emission as the
temperature increases is mainly due to scattering processes
with longitudinal optical phonons and residual ionized
impurities. Raman scattering shows a multiphonon structure,
which depends on the temperature. At low temperatures, up to
the fifth-order phonon peaks appear due to resonant effects.
The increase in the Raman intensity as the temperature
decreases is discussed in terms of a model which gives a very
good quantitative agreement of the relative intensity between
successive phonon peaks. (C) 2002 Elsevier Science Ltd. All
rights reserved.