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Strain effect on electronic transport and ferromagnetic transition temperature in La0.9Sr0.1MnO3 thin films

MPS-Authors
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Chen,  X. J.
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

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Soltan,  S.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

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Zhang,  H.
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Crystal Growth (Masahiko Isobe), Max Planck Institute for Solid State Research, Max Planck Society;
Former Research Groups, Max Planck Institute for Solid State Research, Max Planck Society;

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Habermeier,  H.-U.
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Chen, X. J., Soltan, S., Zhang, H., & Habermeier, H.-U. (2002). Strain effect on electronic transport and ferromagnetic transition temperature in La0.9Sr0.1MnO3 thin films. Physical Review B, 65(17): 174402.


Cite as: https://hdl.handle.net/21.11116/0000-000E-EC79-1
Abstract
We report on a systematic study of strain effects on the
transport properties and the ferromagnetic transition
temperature T-c of high-quality La0.9Sr0.1MnO3 thin films
epitaxially grown on (100) SrTiO3 substrates. Both the
magnetization and the resistivity are critically dependent on
the film thickness. T-c is enhanced with decreasing the film
thickness due to the compressive stain produced by lattice
mismatch. The resistivity above 165 K of the films with various
thicknesses is consistent with small polaronic hopping
conductivity. The polaronic formation energy E-P is reduced
with the decrease of film thickness. We found that the strain
dependence of T-c mainly results from the strain-induced
electron-phonon coupling. The strain effect on E-P is in good
agreement with the theoretical predictions.