Carbon nanotube memory devices of high charge storage stability

Cui, J. B.; Šordan, R.; Burghard, M.; Kern, K.

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Carbon nanotube memory devices of high charge storage stability

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Cui, J. B.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Šordan, R.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Burghard, M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Kern, K.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Cui, J. B., Šordan, R., Burghard, M., & Kern, K. (2002). Carbon nanotube memory devices of high charge storage stability. Applied Physics Letters, 81(17), 3260-3262.

Cite as: https://hdl.handle.net/21.11116/0000-000E-F3D6-E

Abstract

Molecular memory devices with semiconducting single-walled
carbon nanotubes constituting a channel of 150 nm in length are
described. Data storage is achieved by sweeping gate voltages
in the range of 3 V, associated with a storage stability of
more than 12 days at room temperature. By annealing in air or
controlled oxygen plasma exposure, efficient switching devices
could be obtained from thin nanotube bundles that originally
showed only a small gate dependence of conductance. (C) 2002
American Institute of Physics.