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Influence of the Si-Ge interface on phononless radiative recombination in Ge hut clusters grown on Si (001)

MPS-Authors
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Dashiell,  M. W.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons279884

Denker,  U.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280485

Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Dashiell, M. W., Denker, U., & Schmidt, O. G. (2002). Influence of the Si-Ge interface on phononless radiative recombination in Ge hut clusters grown on Si (001). Physica E, 13(2-4), 1030-1033.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F3AF-B
Abstract
Intense photoluminescence (PL) is observed from Ge hut clusters
grown by molecular beam epitaxy on Si (0 0 1), Phononless
radiative recombination results from three-dimensional carrier
confinement of electrons in the surrounding tensile-strained Si
and holes within the Ge hut. Post-growth annealing experiments
reveal that enhanced phononless PL is due to localization of
carriers at the embedded hut cluster's interface. A simple
model is presented which explains the enhanced PL in terms of
wave function overlap of the carriers confined in the type-II
band alignment. (C) 2002 Elsevier Science B.V. All rights
reserved.