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Journal Article

Low temperature epitaxial growth of germanium islands in active regions of silicon interband tunneling diodes

MPS-Authors
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Dashiell,  M. W.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Müller,  C.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Jin-Phillipp,  N. Y.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Denker,  U.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Eberl,  K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Dashiell, M. W., Müller, C., Jin-Phillipp, N. Y., Denker, U., Schmidt, O. G., & Eberl, K. (2002). Low temperature epitaxial growth of germanium islands in active regions of silicon interband tunneling diodes. Materials Science and Engineering B, 89(1-3), 106-110.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F3B3-5
Abstract
We incorporate self-assembling Ge islands into Si-based
interband tunneling diodes grown by molecular beam epitaxy. The
kinetic limitations of low-temperature Ge island formation have
been overcome in the growth windows that are required to retain
sharp delta-doping profiles in the diode's active region. Ge
quantum dots are observed for growth temperatures of 360
degreesC and grown at a rate of 0.125 monolayers per minute.
Photoluminescence spectroscopy and annealing experiments
indicate three-dimensional carrier localization and phononless
radiative recombination, which confirms a dot-like electronic
structure. The Ge quantum dots have been incorporated into the
active region of delta-doped Si interband tunneling diodes.
Room temperature negative-differential-resistance is observed
and the electrical characteristics may be tuned by post-growth
rapid thermal annealing. (C) 2002 Elsevier Science B.V. All
rights reserved.