Polaron states in InAs/GaAs quantum dots: strong electron-phonon coupling regime

Deleporte, E.; Hameau, S.; Isaia, J. N.; Guldner, Y.; Verzelen, O.; Ferreira, R.; Bastard, G.; Zeman, J.; Gérard, J. M.

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Polaron states in InAs/GaAs quantum dots: strong electron-phonon coupling regime

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Zeman, J.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Deleporte, E., Hameau, S., Isaia, J. N., Guldner, Y., Verzelen, O., Ferreira, R., et al. (2002). Polaron states in InAs/GaAs quantum dots: strong electron-phonon coupling regime. Physica E, 13(2-4), 155-160.

Cite as: https://hdl.handle.net/21.11116/0000-000E-F2DF-6

Abstract

We report on the magneto-optical evidence and theoretical
modelling of polaron effects in self-assembled InAs/GaAs
quantum dots, Using far-infrared magneto-transmission
experiments performed up to 28 T at T = 2 K in doped QDs
samples.. we investigate the electronic transitions between the
ground and first excited states. We observe very large
anticrossings in the B-dispersion of the magneto-optical
transitions. whose existence cannot be explained by a purely
electronic model. We thus calculate the coupling between the
mixed electron-lattice states using the Frohlich Hamiltonian
and determine the polaron states and the energies of the
dipolar electric transitions. An excellent agreement between
the calculations and the experimental data is obtained,
demonstrating that the magneto-optical transitions occur
between polaron states. The time dependence of the survival
probability is calculated for the various non-interacting
electron-phonon states, Such probabilities are found to
oscillate and do not show an exponential decay as it would be
the case for a weak coupling regime, This last argument
confirms that the electrons and the LO-phonons experience a
strong coupling regime in QDs. (C) 2002 Elsevier Science B.V.
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