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Journal Article

Diameter scalability of rolled-up In(Ga)As/GaAs nanotubes

MPS-Authors
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Deneke,  Ch.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Müller,  C.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Jin-Phillipp,  N. Y.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Deneke, C., Müller, C., Jin-Phillipp, N. Y., & Schmidt, O. G. (2002). Diameter scalability of rolled-up In(Ga)As/GaAs nanotubes. Semiconductor Science and Technology, 17(12), 1278-1281.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F2E5-E
Abstract
Free-standing nanotubes are formed by rolling-up InGaAs/GaAs
bilayers on a GaAs substrate. We present a systematic study of
the tube diameter as a function of bilayer thicknesses. In our
study we take into account that 2-4 monolayers of the top GaAs
layer are consumed due to oxidation during the overall tube
formation process. We find that a macroscopic continuum
mechanical model can well describe the diameter of the
nanotubes from 80 nm to 600 nm for nearly symmetric layers and
from 21 nm to 550 run for asymmetric bilayers. For thin
symmetric layers the diameter is slightly smaller than
predicted by theory. We find that the growth temperature
significantly influences the nanotube diameter.