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Journal Article

Gated wires and interferometers based on Si/SiGe heterostructures

MPS-Authors
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Portal,  J. C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Zhang,  J.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Department Quantum Many-Body Theory (Walter Metzner), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Estibals, O., Kvon, Z. D., Portal, J. C., Plotnikov, A. Y., Gauffier, J. L., Woods, N. J., et al. (2002). Gated wires and interferometers based on Si/SiGe heterostructures. Physica E, 13(2-4), 1043-1046.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F301-E
Abstract
We report the fabrication and study of gated quantum wires and
interferometers based on a Si/SiGe heterostructure fabricated
by electron lithography and anisotropic ion etching. In the
wires, negative magnetoresistance connected with weak
localisation effects and in the ring, Aharonov-Bohm
oscillations were investigated in the temperature range 30 mK-5
K. The phase coherence time was found to be due to electron-
electron scattering with small energy transfer and magnetic
impurity scattering. High magnetic field Aharonov-Bohm
oscillations connected with the interference of edge states
current have been observed in Si/SiGe ring for the first time.
(C) 2002 Elsevier Science B.V. All rights reserved.