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Journal Article

Closely stacked InAs/GaAs quantum dots grown at low growth rate

MPS-Authors
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Heidemeyer,  H.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Kiravittaya,  S.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Müller,  C.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Jin-Phillipp,  N. Y.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Heidemeyer, H., Kiravittaya, S., Müller, C., Jin-Phillipp, N. Y., & Schmidt, O. G. (2002). Closely stacked InAs/GaAs quantum dots grown at low growth rate. Applied Physics Letters, 80(9), 1544-1546.


Cite as: https://hdl.handle.net/21.11116/0000-000E-E469-B
Abstract
We present a systematic study of closely stacked InAs/GaAs
quantum dots (QDs) grown at low growth rates. Transmission
electron microscopy reveals that for thin spacer layers
vertically aligned QDs merge into one large QD. After capping
the initial QD layer the GaAs surface is decorated with well-
developed nanostructures, which act as nucleation centers for
the QDs deposited in the second layer. Despite the size
increase, photoluminescence (PL) experiments show a systematic
blueshift up to 103 meV of the QD related signal with
decreasing spacer thickness. We explicitly show that this
significant blueshift cannot fully be ascribed to specific
growth phenomena, but instead is caused by the actual presence
of the second dot layer. We report a PL linewidth as narrow as
16 meV at low temperature for a sample with 5 nm spacer
thickness. (C) 2002 American Institute of Physics.