Interface of directly bonded InP wafers for vertical couplers

Jin-Phillipp, N. Y.; Liu, B.; Bowers, J. E.; Hu, E. L.; Kelsch, M.; Thomas, J.; Rühle, M.

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Interface of directly bonded InP wafers for vertical couplers

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Jin-Phillipp, N. Y.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Kelsch, M.
Scientific Facility Stuttgart Center for Electron Microscopy (Peter A. van Aken), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Jin-Phillipp, N. Y., Liu, B., Bowers, J. E., Hu, E. L., Kelsch, M., Thomas, J., et al. (2002). Interface of directly bonded InP wafers for vertical couplers. Applied Physics Letters, 80(8), 1346-1348.

Cite as: https://hdl.handle.net/21.11116/0000-000E-E3B1-9

Abstract

Vertical directional couplers fabricated using direct wafer
bonding have demonstrated a very short coupling length and a
small excess optical loss introduced by the bonded interface
layer. The structure of the interface of directly bonded InP
wafers is investigated. Dislocations at the interface are found
to accommodate the tilt misorientation between the two wafers
without introducing extra misfit. Body-centered-tetragonal In
inclusions of a size of few nanometers are identified at the
interface. The excess optical loss of the coupler based on
directly bonded InP wafers due to the formation of these
inclusions may be eliminated by using lower temperature and a
phosphor atmosphere for direct bonding. (C) 2002 American
Institute of Physics.