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Photoluminescence studies of isotopically enriched silicon: isotopic effects on the indirect electronic band gap and phonon energies

MPS-Authors
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Ruf,  T.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Cardona,  M.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Konuma,  M.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Karaiskaj, D., Thewalt, M. L. W., Ruf, T., Cardona, M., & Konuma, M. (2002). Photoluminescence studies of isotopically enriched silicon: isotopic effects on the indirect electronic band gap and phonon energies. Solid State Communications, 123(3-4), 87-92.


Cite as: https://hdl.handle.net/21.11116/0000-000E-E39B-3
Abstract
We have performed high-resolution photoluminescence
spectroscopy on silicon crystals with different isotopic
composition and investigated the effects of this composition on
the indirect electronic band gap and phonon energies. From the
relative energy shift of the indirect electronic band gap
between two crystals of different isotopic composition, the
zero-point renormalization energy of that electronic band gap
was estimated. The experimentally determined phonon frequency
shifts between crystals of different isotopic composition are
compared with theoretically predicted frequency shifts. We
further present a detailed analysis of the different
contributions leading to the observed phonon frequency shifts.
(C) 2002 Elsevier Science Ltd. All rights reserved.