Magneto-photoluminescence study of electronic transitions in InAs/GaAs quantum 
dot layers

Kuldova, K.; Oswald, J.; Zeman, J.; Hulicius, E.; Pangrac, J.; Melichar, K.; Simecek, T.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Magneto-photoluminescence study of electronic transitions in InAs/GaAs quantum dot layers

MPS-Authors

/persons/resource/persons280703

Zeman, J.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Kuldova, K., Oswald, J., Zeman, J., Hulicius, E., Pangrac, J., Melichar, K., et al. (2002). Magneto-photoluminescence study of electronic transitions in InAs/GaAs quantum dot layers. Materials Science and Engineering B, 88(2-3), 247-251.

Cite as: https://hdl.handle.net/21.11116/0000-000E-E367-E

Abstract

Magneto-photoluminescence of single- and multi-layered self-
organised MOCVD grown InAs quantum dots in GaAs has been
investigated at 77 K in magnetic fields up to B = 27 T in
Faraday configuration, From one up to six peaks are resolved at
B = 0 T in the photoluminescence spectra when the excitation
intensity increases from 10 mW up to 1 W (514.5 nm line of Ar+
laser). Simple one particle Fock Darwin model of two-
dimensional electrons confined in a parabolic well describes
satisfactorily the evolution of magneto-photoluminescence only
for some peaks. The other peaks exhibit slight decrease in
energy with increasing magnetic field ( similar to 5 meV at 27
T). (C) 2002 Elsevier Science B.V.. All rights reserved.